Wing On PTM16003
NPN Silicon Power Transistor
| Part No. | PTM16003 |
|---|---|
| Datasheet | PTM16003 Download |
| Manufacturer | Wing On |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage (VEB=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCES VCEO VEBO IC ICP PC TJ TSTGELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Fall Time SYMBOL VCEO IEBO hFE1 hFE2 hFE3 hFE1 / hFE2 VCE(sat) VBE(sat) fT tstg tf Test Condition IC=5mA, IB=0 VEB=9V,IC=0 VCE=10V,IC=1mA VCE=10V,IC=0.4A VCE=10V,IC=1.0A - IC=0.5A,IB=0.1A IC=1.5A,IB=0.5A IC=0.5A,IB=0.1A VCE=10V,IC=0.1A Vcc=125V, Ic=2.0A Ib1=0.2A, Ib2=-0.2A RL=125Ω * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Green Package TO-92 1 2 3 1. Emitter 2. Collector 3. Base RATING 900 900 500 9 1.5 3.0 1.1 150 -55~150 UNIT V V V V A A W ℃ ℃ Min Typ.