PTR13003 Datasheet | Wing On

Nov 2008 NPN Silicon Power Transistor 1.5 Amperes / 20 Watts Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time - Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% SYMBOL VCEO IEBO h FE1 h FE2 VCE(sat) VBE(sat) Cob f T ton tstg t F Test Condition IC=5m A, IB=0 VEB=9V,IC=0 VCE=2V,IC=0.5A VCE=2V,IC=1A IC=0.5A,IB=0.1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A IC=0.5A,IB=0.1A IC=1A,IB=0.25A VCB=10V, f=0.1MHz VCE=10V,IC=0.1A Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125Ω TO-126 3 2 1 1. Emitter 2. Collector 3. Base RATING 700 400 9 1.5 3 0.75 20 150 -65~150 UNIT V V V A A A W ℃ ℃ Min Typ. Max Unit μA 21 p...