The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC1047
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
MT-100
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A IC=4.0A,IB1=-IB2=0.4A,VCC=60V
1.5 0.35
MAX 160 140 12 100 3 2.0 1.