2SC1047
DESCRIPTION
Silicon Epitaxial Planar Transistor
High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
MT-100
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A IC=4.0A,IB1=-IB2=0.4A,VCC=60V
1.5 0.35
MAX 160 140 12 100 3 2.0 1.0
UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55
- Tmb 25
MAX 160 140 6 12 3 100 150 150
UNIT V V V A A...
