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2SC4596E - NPN TRANSISTOR

General Description

SILICON EPITAXIAL PLANNAR TRANSISTOR High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VBE tf

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Datasheet Details

Part number 2SC4596E
Manufacturer Wing Shing Computer Components
File Size 69.41 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC4596E Datasheet

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2SC4596E GENERAL DESCRIPTION SILICON EPITAXIAL PLANNAR TRANSISTOR High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Emitter forward voltage Fall time Tmb 25 IC = 2A; IB = 0.2A IE = 2A IC=2A,IB1=-IB2=0.