Datasheet Summary
GENERAL DESCRIPTION
SILICON EPITAXIAL PLANNAR TRANSISTOR
High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VBE tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Emitter forward voltage Fall time
Tmb 25 IC = 2A; IB = 0.2A IE = 2A IC=2A,IB1=-IB2=0.2A,VCC=30V
- LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg...
