GENERAL DESCRIPTION
SILICON EPITAXAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 200 150 2 20 1.5 2.0 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A 1.5 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 200 150 5 2 0.5 20 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS
SYMBOL ICBO...
Wing Shing Computer Components