Datasheet Summary
GENERAL DESCRIPTION
SILICON EPITAXAL PLANAR TRANSISTOR
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 200 150 2 20 1.5 2.0 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter...
