Datasheet Summary
NPN SILICON TRANSISTOR
Features
Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage
Tamb=25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE
1 unless otherwise specified
Test Ic= 100 Ic= 0. 1 IE= 100 VCB=50 VCE=35 VEB= VCE= 3 5 conditions A mA A V, V, V V, IE=0 IB=0 IC=0 IE=0...
