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2SA671
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Rating
-50 -50 -5 -3 25 150 -50~150
Unit
V V V A W
℃ ℃
TO-220
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product
Symbol
ICBO IEBO hFE1 VCE(sat) fT
Test Condition
VCB=-50V , IE=0 VEB= -5V , IC=0 VCE= -4V , IC=-1A IC=-3A , IB=-0.3A VCE= -2V , IC=-0.5A
Min 35
Typ 8
Max
-10 10 200 -1.
A671 Datasheet
