D389
2SD389
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! plement to 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Rating
60 60 7 4 30 150 -50~150
Unit
V V V A W
℃ ℃
TO-220
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic
Collector Cutoff Current .Data SDEhm Ceie Cttte4urr Ur Ce.uncttoo Gmffa Cinurrent
Collector- Emitter Saturation Voltage Current Gain Bandwidth Product
Symbol
ICBO IEBO h FE1 VCE(sat) f T
Test Condition
Min Typ
VCB= 60V , IE=0
VEB= 7V , IC=0
VCE= 3V , IC=1A
IC=2A , IB=0.2A
VCE= 5V , IC=0.5A
Max
100 100
Unit
µA µA
V MHZ
Wing Shing puter ponents Co., (H.K.)Ltd. Homepage: http://.wingshing.
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar....
