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2SD389
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Rating
60 60 7 4 30 150 -50~150
Unit
V V V A W
℃ ℃
TO-220
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic
Collector Cutoff Current www.DataSDEhmCeieCttte4urrUrCe.uncttooGmffaCinurrent
Collector- Emitter Saturation Voltage Current Gain Bandwidth Product
Symbol
ICBO IEBO hFE1 VCE(sat) fT
Test Condition
Min Typ
VCB= 60V , IE=0
VEB= 7V , IC=0
VCE= 3V , IC=1A
70
IC=2A , IB=0.2A
VCE= 5V , IC=0.5A
18
Max
100 100
1.