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D389 - NPN EPITAXIAL SILICON TRANSISTOR

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Part number D389
Manufacturer Wing Shing Computer Components
File Size 96.87 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
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    2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 60 7 4 30 150 -50~150 Unit V V V A W ℃ ℃ TO-220 ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Collector Cutoff Current www.DataSDEhmCeieCttte4urrUrCe.uncttooGmffaCinurrent Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition Min Typ VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 3V , IC=1A 70 IC=2A , IB=0.2A VCE= 5V , IC=0.5A 18 Max 100 100 1.
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