S2005A Datasheet | Wing Shing Computer Components

GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PH CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5A,IB1=-IB2=1.2A,VCC=140V LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 -55 MAX 1500 600 5 8 4 6 125 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat h FE VF f T Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100m A L = 25m H IC = 4.5A; IB = 2.0A IC = 4.5A; IB = 2.0A IC = 1.0A; VCE = 5V IF=4.0A IC = 0.1A; VCE = 10V VCB = 10V IC=4.5A,IB1=-IB2=1.2A,VCC=140V IC=4.5A,IB1=-IB2=1.2A,VCC=140V MAX 1.0 2.0 UNIT m A m A V 8 3 1.5 2.5 30...