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S8550LT1 - HIGH VOLTAGE TRANSISTOR

Key Features

  • Die Size 0.44.
  • 0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP.

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Datasheet Details

Part number S8550LT1
Manufacturer Wing Shing Computer Components
File Size 85.70 KB
Description HIGH VOLTAGE TRANSISTOR
Datasheet download datasheet S8550LT1 Datasheet

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S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown voltage voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1） Test conditions Ic= 100µA , IE=0 Ic= 1 mA，IB=0 IE= 100µA，IC=0 VCB= 30V , IE=0 VEB= 5V，IC=0 VCE= 1V, IC= 150mA VCE= 1V, IC= 500mA IC= 500mA, IB= 50 mA IC= 500mA, IB= 50 mA IC= 10mA, VCE =1V MIN 30 21 5.0 TYP MAX UNIT V V V Collector-emitter breakdown Emitter-base breakdown current current voltage Collector cut-off Emitter cut-off 1.0 100 120 40 500 1.2 1.