S8550LT1
S8550LT1 is HIGH VOLTAGE TRANSISTOR manufactured by Wing Shing Computer Components.
HIGH VOLTAGE TRANSISTOR: (PNP) Features
Die Size 0.44- 0.44mm Power dissipation PCM : 225m W （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V
PNP EPITAXIAL SILICON TRANSISTORS
SOT- 23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltage voltage
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE（1）
Test conditions
Ic= 100µA , IE=0 Ic= 1 m A，IB=0 IE= 100µA，IC=0 VCB= 30V , IE=0 VEB= 5V，IC=0 VCE= 1V, IC= 150m A VCE= 1V, IC= 500m A IC= 500m A, IB= 50 m A IC= 500m A, IB= 50 m A IC= 10m A, VCE =1V
30 21 5.0
UNIT
Collector-emitter breakdown Emitter-base breakdown current current voltage
Collector cut-off Emitter cut-off
1.0 100 120 40 500 1.2 1.0 400
µA n A
DC current gain(note) HFE（2）
Collector-emitter saturation voltage Base-emitter saturation Base-emitter voltage voltage
VCE(sat) VBE(sat) VBE(on) m V V V
CLASSIFICATION OF HFE(1)
Rank Range B9C
120-200
B9D
160-300
B9E
280-400...
