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WMBT5401LT1
PNP Silicon Transistor
1 BASE 2 EMITTER
1
COLLECTOR 3
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –150 –160 –5.0 –500
Unit Vdc Vdc
2
SOT– 23 (TO – 236AB) Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
WMBT5401LT1 Datasheet
