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WMBT5551LT1 Datasheet PDF

Wing Shing Computer Components WMBT5551LT1

NPN Silicon Transistor

Part No. WMBT5551LT1
Datasheet WMBT5551LT1 Download
Manufacturer
Wing Shing Computer Components
Description NPN Silicon Transistor
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WMBT5551LT1 datasheet page 1 preview

MAXIMUM RATINGS

Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Unit Vdc Vdc Vdc mAdc 6.0 600 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 Unit mW mW/°C °C/W mW mW/°C RqJA TJ, Tstg – 55 to +150 °C/W °C DEVICE MARKING MMBT5550LT1 = M1F; MMBT5551LT1 = G1

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 1...
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