D1650
DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PML
CONDITIONS VBE = 0V MIN
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC = 2.0A; IB = 0.4A f = 16KHz IF = 2.0A IC=2A,IB1=-IB2=0.4A,VCC=140V
- MAX 1500 600 3.5 7.0 50 1.5 2.0 1.0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power...
