Winsem Technology WTBV116DI
POWER TRANSISTOR
| Part No. | WTBV116DI |
|---|---|
| Datasheet | WTBV116DI Download |
| Manufacturer |  Winsem Technology |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High Voltage● Very High Switch Speed
● BVCEO : 400V
● BVCBO : 800V
● IC : 1.5A
● Silicon Triple Diffused Type Application
● Electronic Ballasts
● Adapter
● Lighting
ABSOLUTE MAXIMUM RATINGS
( Tc = 25℃ ) Parameter Collector-Base Voltage Collect-Break Down Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO92) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP PD TJ TSTG Version A10 Max Rating 800 800 400 9 1.5 2 1.5 30 150 -55 ~ +150 Unit V V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV116DL / WTBV116DI POWER TRANSISTORELECTRICAL CHARACTERISTICS
( Tc = 25℃ ) Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 1mA, IE=0 800 ─ 400 ─ ─ ─ V V Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 9─ ─ V Collector Cutoff Current IC...
