WTBV118DI Datasheet PDF

FEATURES

● High Voltage
● BVCEO : 400V
● BVCBO : 800V
● IC : 1.5A
● Silicon Triple Diffused Type
● NPN Silicon Transistor with Diode
● Free-wheeling Diode Inside
● Low Variable Storage-time Spread
● Low Base Drive Requirement
● Half Bridge Light Ballast Application Application
● Electronic Ballasts
● Adapter
● Lighting WTBV118DI POWER TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect Current Collector Peak Current (tp <5ms) Base Current Base Peak Current (tp <5ms) Total Power Dissipation @ Tc ≦ 25℃ (TO-251) Maximum Operating Junction Temperature Storage Temperature Range Version A10 Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot TJ TSTG Max rating 800 400 10 1.5 3 1 2 30 +150 -65 ~ +150 Unit V V V A A A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV118DI POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS

( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVC...