Winsem Technology WTBV53DM
POWER TRANSISTOR
| Part No. | WTBV53DM |
|---|---|
| Datasheet | WTBV53DM Download |
| Manufacturer |  Winsem Technology |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High Voltage● Very High Switch Speed
● BVCEO : 400V
● BVCBO : 800V
● IC : 2.5A
● VCE(SAT) : max1V@Ic / IB=1A/ 0.25A
● Silicon Triple Diffused Type Application
● Electronic Ballasts
● Adapter
● Lighting
ABSOLUTE MAXIMUM RATINGS
( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Version A12 Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Max Rating 800 400 9 2.5 5 20 30 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV53DM(R) / WTI53D POWER TRANSISTORELECTRICAL CHARACTERISTICS
( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 10mA, IE=0 Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 Collector Cutoff Current ICBO VCB = 700V, IE=0 Emitter Cutoff Current IE...
