Winsem Technology WTBV56DM
POWER TRANSISTOR
| Part No. | WTBV56DM |
|---|---|
| Datasheet | WTBV56DM Download |
| Manufacturer |  Winsem Technology |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High Voltage● Very High Switch Speed
● BVCEO : 400V
● BVCBO : 800V
● IC : 4A
● Silicon Triple Diffused Type Application
● Electronic Ballasts
● Adapter
● Lighting
ABSOLUTE MAXIMUM RATINGS
( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO126) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Version A12 Max Rating 800 400 9 4 8 20 35 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV56DM (R) / WTI56D POWER TRANSISTORELECTRICAL CHARACTERISTICS
( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current BVCBO BVCEO BVEBO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 700V, IE=0 Emitter Cutoff Current IEBO hFE1 VEB = 7V, IC=0 VCE = 5V, IC=500m...
