Winsem Technology WTI57D
POWER TRANSISTOR
| Part No. | WTI57D |
|---|---|
| Datasheet | WTI57D Download |
| Manufacturer |  Winsem Technology |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High Voltage● Very High Switch Speed
● BVCEO : 400V
● BVCBO : 800V
● IC : 4A
● Silicon Triple Diffused Type WTI57D POWER TRANSISTOR Application
● Electronic Ballasts
● Adapter
● Lighting
ABSOLUTE MAXIMUM RATINGS
( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Max Rating 800 400 9 4 8 35 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Version A12 Page 1 Winsem Technology Corp. WTI57D POWER TRANSISTORELECTRICAL CHARACTERISTICS
( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current BVCBO BVCEO BVEBO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 700V, IE=0 Emitter Cutoff Current IEBO hFE1 VEB = 7V, IC=0 VCE = 5V, IC=500mA DC Current Gain hFE2 VC...
