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5HB03N8 - 30V SO8 Complementary enhancementmode MOSFET H-Bridge

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features.
  • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D.

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Datasheet Details

Part number 5HB03N8
Manufacturer Winsemi
File Size 579.66 KB
Description 30V SO8 Complementary enhancementmode MOSFET H-Bridge
Datasheet download datasheet 5HB03N8 Datasheet
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    Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vice De Dev V(BR)D SS (BR)DS QG RDS(on) 25mΩ @ VGS= 10V N-CH 30V 9.0nC 45mΩ @ VGS= 4.5V 50m Ω @ VGS= -10V P-CH -30V 12.7nC 75mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.
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