5HB03N8
5HB03N8 is 30V SO8 Complementary enhancementmode MOSFET H-Bridge manufactured by Winsemi.
Datasheet pdf
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5HB03N8 ment mode MOSFET H-Bridge 30V SO8 plementary enhance enhancem
Summary vice De Dev V(BR)D SS (BR)DS QG RDS(on) 25mΩ @ VGS= 10V N-CH 30V 9.0nC 45mΩ @ VGS= 4.5V 50m Ω @ VGS= -10V P-CH -30V 12.7nC 75mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A
Description
This new generation plementary MOSFET H-Bridge Features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
- -
2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive
P1D/N1D
P2D/N2D
Applications
- -
N1G
N2G
DC Motor control DC-AC Inverters
N1S/N2S
Ordering information vice De Dev 5HB03N8 Reel size es)...
