K2698 Datasheet | Winsemi

Features - 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V - Ultra-low Gate charge(Typical 42nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive...