Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powe
Features
- 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
- Ultra-low Gate charge(Typical 42nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃)
K2698
Silicon N-Channel MOSFET
General.
K2698 Datasheet
