SEP9296AGH Datasheet | Winsemi

Description Silicon N-Channel MOSFET Features - 100V, 183A - RDS(ON) = 4.8mΩ (Max.) @ VGS = 10V, ID = 20A - Low RDS(on) & FOM - Extremely low switching loss - Excellent stability and uniformity - 100% UIS tested , 100% △VDS Tested - Ro HS and Halogen-Free pliant Application - High Frequency Switching - Synchronous Rectification Package TO-220 SEP9296AGH Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS VGSS ID ID IDM PD IAS EAS RθJC RθJA TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current note5 Continuous Drain Current note5 Pulsed Drain Current note3 Power Dissipation note2 Avalanche Current note3,6 TC = 25℃ TC = 100℃ TC = 25℃ Single Pulse Avalanche Energy note3,6 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient note1,4 Operating and Storage Temperature Range Max. 100 ± 20 183 115 732 250 21 210 0.5 50 -55 to +150 Units V V A A A W A m J ℃/W ℃/W ℃ WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS .winsemi. Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS 1/7 SEP9296AGH Product...