SFP50N06 Datasheet Silicon N-Channel MOSFET

Manufacturer: Winsemi

SFP50N06 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	SFP50N06
Manufacturer	Winsemi
File Size	476.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	SFP50N06 Datasheet

General Description

This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources.

All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.

Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Parameter Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Fact

Overview

SFP50N06 Silicon N-Channel MOSFET.

Key Features

RDS(on)(Max 22mΩ)@VGS=10V.
Ultra-low Gate Charge(Typical 31nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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