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SFP50N06 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources.

Features

  • RDS(on)(Max 22mΩ)@VGS=10V.
  • Ultra-low Gate Charge(Typical 31nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number SFP50N06
Manufacturer Winsemi
File Size 476.93 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SFP50N06 Datasheet

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Full PDF Text Transcription

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SFP50N06 Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.
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