SFP50N06 Overview
This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances pared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Ratings Symbol VDSS ID...
SFP50N06 Key Features
- RDS(on)(Max 22mΩ)@VGS=10V
- Ultra-low Gate Charge(Typical 31nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
