WBD13003D - NPN Power Transistor

Datasheet Summary

Description

This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply.

Features

Very High Switching Speed.
High Voltage Capability.
Wide Reverse Bias SOA.
Built-in free wheeling diode symbol 2.Collector 1.Base 3.Em itter General.

Winsemi

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Datasheet Details

Part number	WBD13003D
Manufacturer	Winsemi
File Size	261.07 KB
Description	NPN Power Transistor
Datasheet	WBD13003D Datasheet
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WBD13003D High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA ■ Built-in free wheeling diode symbol 2.Collector 1.Base 3.Em itter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current PC Total Dissipation at Tc*=25℃ TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 600 400 9.0 2 3.0 0.75 1.

Published: Mar 29, 2017 |