Datasheet4U Logo Datasheet4U.com

WBD13003D Datasheet NPN Power Transistor

Manufacturer: Winsemi

Overview: WBD13003D High Voltage Fast-Switching NPN Power Transistor.

Datasheet Details

Part number WBD13003D
Manufacturer Winsemi
File Size 261.07 KB
Description NPN Power Transistor
Datasheet WBD13003D-Winsemi.pdf

General Description

This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply.

Absolute Maximum Ratings Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current PC Total Dissipation at Tc*=25℃ TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 600 400 9.0 2 3.0 0.75 1.5 10 150 -55~150 Units V V V A A A A W ℃ ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Cas

Key Features

  • Very High Switching Speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA.
  • Built-in free wheeling diode symbol 2.Collector 1.Base 3.Em itter General.

WBD13003D Distributor