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WBP3306 Datasheet NPN Power Transistor

Manufacturer: Winsemi

Overview: WBP3306 High Voltage Fast-Switching NPN Power Transistor.

Datasheet Details

Part number WBP3306
Manufacturer Winsemi
File Size 482.33 KB
Description NPN Power Transistor
Datasheet WBP3306-Winsemi.pdf

General Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Absolute Maximum Ratings Symbol Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 (Note) Value 950 400 12 4 8 70 150 -65~150 Units V V V A A W ℃ ℃ Thermal Characteristics Symbol Parameter RӨJC RӨJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.8 62.5 Units ℃/W ℃/W Rev.A03 Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

Electrical Characteristics (TC=25℃ unless otherwise

Key Features

  • Very high switching speed.
  • High Voltage Capability.
  • Wide Reverse Bias SOA General.

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