• Part: WBW3320
  • Description: NPN Power Transistor
  • Category: Transistor
  • Manufacturer: Winsemi
  • Size: 319.31 KB
WBW3320 Datasheet (PDF) Download
Winsemi
WBW3320

Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Symbol Parameter VCES VCEO VEBO IC ICP IB IBM PC TJ TST G Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms TO247 WBW3320W Value Units 500 400 9 15 30 7 14 120 150 -55 ~ 150 V V V A A A A W ℃ ℃ Sym bol Parameter RθJc Value 1.05 62.5 Units ℃/W ℃/W Rev.A Jul.2011 Copyright@Winsemi Microelec.

Key Features

  • Very High Switching Speed
  • High Voltage Capability
  • Wide Reverse Bias SOA TO3P WBW3320