Datasheet Summary
WFD2N60B Product Description
Silicon N-Channel MOSFET
Features
- 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 5.3nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply...
