WFD4N65S Datasheet PDF

Winsemi WFD4N65S

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Part No.	WFD4N65S
Datasheet	WFD4N65S Download
Manufacturer	Winsemi
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

650V Super-Junction Power MOSFET

FEATURES

Ultra low Rdson Ultra low gate charge (typ. Qg =13nC) 100% UIS tested RoHS compliant

GENERAL DESCRIPTION

Power MOSFET is fabricated using advanced super junction technology.

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS Drain Source Voltage Continuous Drain Current (Tc=25℃) ID (Tc=100℃) Parameter I DM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) I AR Single Pulse Avalanche Current 1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature T stg Storage Temperature Is Continuous diode forward current Is,pulse Diode pulse current Notes: 1.Repetitive Rating:Pulse width limited by maximum Junction Temperature 2.IAS=2A,VDD=60V,RG=25Ω,Starting TJ=25℃ Thermal Characteristics Symbol Parameter RQJC Thermal Resistance , Junction -to -Case RQJA Thermal Resistance , Junction-to -Ambient D G S Value 650 4 2.5 12 ±30 130 4 0.4 50 0.4 150 -55~150 4 12 Units...