Datasheet Summary
WFD5N65L Product Description
Silicon N-Channel MOSFET
Features
- 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V
- Low Crss (typical 3.62pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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