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WFD5N65L - Silicon N-Channel MOSFET

Description

Silicon N-Channel MOSFET

Features

  • 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V.
  • Low Crss (typical 3.62pF ).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFD5N65L
Manufacturer Winsemi
File Size 398.35 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD5N65L Datasheet

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Full PDF Text Transcription

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WFD5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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