WFF18N50L
Description
Silicon N-Channel MOSFET
Features
- 18A,500V,RDS(on)(Max0.31Ω)@VGS=10V
- Ultra-low Gate charge(Typical 37.9n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGS EAS PD
TJ,Tstg
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃...
