WFF18N50L - Silicon N-Channel MOSFET

Winsemi

General Description

Silicon N-Channel MOSFET

Key Features

18A,500V,RDS(on)(Max0.31Ω)@VGS=10V.
Ultra-low Gate charge(Typical 37.9nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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WFF18N50L silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFF18N50L
Manufacturer	Winsemi
File Size	155.64 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF18N50L Datasheet

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WFF18N50L Product Description Silicon N-Channel MOSFET Features  18A,500V,RDS(on)(Max0.31Ω)@VGS=10V  Ultra-low Gate charge(Typical 37.9nC)  Fast Switching Capability  100%Avalanche Tested  Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.