Datasheet Details
| Part number | WFF5N80 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 535.76 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFF5N80-Winsemi.pdf |
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| Part number | WFF5N80 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 535.76 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFF5N80-Winsemi.pdf |
|
|
|
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total P
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