Datasheet Summary
WFF7N65L Product Description
Silicon N-Channel MOSFET
Features
- 7A,650V,RDS(on)(Max1.38Ω)@VGS=10V
- Low Crss (typical 15pF )
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage (VISO=4000V AC)
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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