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WFF840FS Datasheet PDF

Winsemi WFF840FS

The value of RθJC is measured in a still air environment with TA =25°C and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
Part No. WFF840FS
Datasheet WFF840FS Download
Manufacturer
Winsemi
Description Silicon N-Channel MOSFET
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WFF840FS datasheet page 1 preview

DESCRIPTION

Silicon N-Channel MOSFET

FEATURES

● 500V, 9A
● RDS(ON) = 0.85Ω (Max.) @ VGS = 10V, ID = 4.5A
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● RoHS and Halogen-Free Compliant Application
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC) Package TO-220F WFF840FS

ABSOLUTE MAXIMUM RATINGS

TC=25℃ unless otherwise specified Symbol Parameter VDSS VGSS ID IDM PD EAS RθJC RθJA TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current note5 Pulsed Drain Current note3 Power Dissipation note2 Single Pulse Avalanche Energy note3,6 TC = 25℃ TC = 25℃ Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient note1,4 Operating and Storage Temperature Range Max. 500 ± 30 9 36 36.8 558 3.5 65 -55 to +150 Units V V A A W mJ ℃/W ℃/W ℃ WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 WINSEMI MICROELECTRONICS WINSE...
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