WFP5N60B Datasheet | Winsemi

Features - 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V - Ultra-low Gate charge(Typical 15nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor...