Datasheet4U Logo Datasheet4U.com

WFP630 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 22nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFP630
Manufacturer Winsemi
File Size 486.17 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP630 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WFP630 N-Channel MOSFET Wisdom technologies
WFP634 N-Channel MOSFET Wisdom technologies
WFP634 Power MOSFET VBsemi
WFP640 N-Channel MOSFET Wisdom technologies
WFP650 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

Other Datasheets by Winsemi

Part Number Description
WFP640 Silicon N-Channel MOSFET
WFP13N50 Silicon N-Channel MOSFET
WFP13N50C Silicon N-Channel MOSFET
WFP18N50 Silicon N-Channel MOSFET
WFP3205 Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
WFP630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Published: |