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WFP640 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

  • 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 45nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation voltage(VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFP640 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP640
Manufacturer Winsemi
File Size 529.77 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP640 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V � Ultra-low Gate Charge(Typical 45nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFP640 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor control.