FEATURES
18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Isolation voltage(VISO=4000V AC) Maximum Junction Temperature Range(150℃) WFP640 Silicon N-Channel MOSFET GENERAL DESCRIPTION
This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor control. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃)
Winsemi
