WFP830 Datasheet PDF - Winsemi Silicon N-Channel MOSFET Specs

WFP830 - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 32nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

Datasheet Details

Part number	WFP830
Manufacturer	Winsemi
File Size	495.21 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFP830 Datasheet
Additional preview pages of the WFP830 datasheet.

📁 Similar Datasheet

WFP830 - N-Channel MOSFET (Wisdom technologies)

WFP85N06 - N-Channel MOSFET (Wisdom technologies)

WFP8N60 - N-Channel MOSFET (Wisdom technologies)

WFP8N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)

WFP10N60 - N-Channel MOSFET (Wisdom technologies)

WFP10N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)

WFP10N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)

WFP12N60 - N-Channel MOSFET (Wisdom technologies)

WFP12N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)

WFP12N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)

Full PDF Text Transcription

Click to expand full text

WFP830 Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

Published: Apr 24, 2019 |