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WFSA5406 Datasheet PDF

Winsemi WFSA5406

N- Channel and P-Channel Silicon MOSFETs

Part No. WFSA5406
Datasheet WFSA5406 Download
Manufacturer
Winsemi
Description N- Channel and P-Channel Silicon MOSFETs
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WFSA5406 datasheet page 1 preview

FEATURES

● Low On-resistance.
● Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package.
● High-density mounting.
● RoHS compliant. SOP-8

APPLICATIONS

● General-Purpose Switching Device
● For motor drives, inverters.

ABSOLUTE MAXIMUM RATINGS

at Ta=250C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Conditions Ratings N-Ch 60 +25 5 P-Ch -60 +25 -3.5 -14 1.3 Unit V V A A W PW≤10uS, duty cycle≤1% Mounted 2 20 board on a ceramic (1000mm ×0.8mm) 1unit Mounted 2 PT Tch Tstg on a ceramic board (1000mm ×0.8mm) 1.7 150 -55~+150 W 0 0 C C Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Datasheet pdf - WFSA5406 N-Channel

ELECTRICAL CHARACTERISTICS

at Ta=250C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain C...
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