Winsemi WFSA5406
N- Channel and P-Channel Silicon MOSFETs
FEATURES
● Low On-resistance.● Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package.
● High-density mounting.
● RoHS compliant. SOP-8
APPLICATIONS
● General-Purpose Switching Device● For motor drives, inverters.
ABSOLUTE MAXIMUM RATINGS
at Ta=250C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Conditions Ratings N-Ch 60 +25 5 P-Ch -60 +25 -3.5 -14 1.3 Unit V V A A W PW≤10uS, duty cycle≤1% Mounted 2 20 board on a ceramic (1000mm ×0.8mm) 1unit Mounted 2 PT Tch Tstg on a ceramic board (1000mm ×0.8mm) 1.7 150 -55~+150 W 0 0 C C Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Datasheet pdf - WFSA5406 N-ChannelELECTRICAL CHARACTERISTICS
at Ta=250C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain C...