Winsemi WFSA6503
N- Channel and P-Channel Silicon MOSFETs
| Part No. | WFSA6503 |
|---|---|
| Datasheet | WFSA6503 Download |
| Manufacturer |  Winsemi |
| Description | N- Channel and P-Channel Silicon MOSFETs |
| Buy | Stock & Price |
FEATURES
● Low On-resistance.● Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4.5V/-4.5V supply voltage contained in a single package.
● High-density mounting.
● RoHS compliant. SOP-8
APPLICATIONS
● General-Purpose Switching Device● For motor drives, inverters.
ABSOLUTE MAXIMUM RATINGS
at Ta=250C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Conditions Drain-Source Voltage Gate-Source Voltage Continuous Drain Current PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm ×0.8mm) 1unit Mounted on a ceramic board (1000mm ×0.8mm) Maximum Temperature Storage Temperature Range Junction 2 2 Ratings N-Ch 30 ±20 6.9 30 1.3 P-Ch -30 ±20 -6 -30 1.3 Unit V V A A W Total Dissipation PT 1.7 1.7 W 0 Channel Temperature Storage Temperature Tch Tstg 150 -55~+150 0 C C Rev.A Feb.2012 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Datasheet pdf...
