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WFU5N60 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power sui

Key Features

  • 4.5A,600V,RDS(on)(Max2.5Ω)@VGS=10V Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFU5N60
Manufacturer Winsemi
File Size 557.38 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU5N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFU5N60 Silicon N-Channel MOSFET Features � � � � � 4.5A,600V,RDS(on)(Max2.5Ω)@VGS=10V Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power suited for half bridge and electronic lamp ballast, high efficiency switched supplies, active power factor correction.