WFU5N60B Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr B WFU5N60 5N60B Silicon N-Channel MOSFET Features - - - - - 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power suited for half bridge and electronic lamp ballast, high efficiency switched supplies, active...