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WFU5N60B - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power sui

Features

  • 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFU5N60B
Manufacturer Winsemi
File Size 558.00 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU5N60B Datasheet
Additional preview pages of the WFU5N60B datasheet.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr B WFU5N60 5N60B Silicon N-Channel MOSFET Features � � � � � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power suited for half bridge and electronic lamp ballast, high efficiency switched supplies, active power factor correction.
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