WFU5N65L Datasheet | Winsemi

WFU5N65L Product Description Silicon N-Channel MOSFET Features - 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V - Low Crss (typical 3.62pF ) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. G D S...