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WFU730 - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 32nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFU730

Datasheet Details

Part number WFU730
Manufacturer Winsemi
File Size 722.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU730 Datasheet
Additional preview pages of the WFU730 datasheet.

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Full PDF Text Transcription

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U730 WF WFU Silicon N-Channel MOSFET Features ■5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
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