Datasheet4U Logo Datasheet4U.com

WFW24N50W - Silicon N-Channel MOSFET

Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

Features

  • 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 90nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFW24N50W Silicon N-Channel MOSFET General.

📥 Download Datasheet

Datasheet Details

Part number WFW24N50W
Manufacturer Winsemi
File Size 467.80 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW24N50W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WFW24N60 N-Channel MOSFET Wisdom technologies
WFW20N50 N-Channel MOSFET Wisdom
WFW20N60 N-Channel MOSFET Wisdom technologies
WFW28N60 N-Channel MOSFET Wisdom technologies
WFW10N80 N-Channel MOSFET Wisdom technologies

Other Datasheets by Winsemi

Part Number Description
WFW20N60W Silicon N-Channel MOSFET
WFW13N50 Silicon N-Channel MOSFET
WFW18N50N Silicon N-Channel MOSFET
WFW18N50W Silicon N-Channel MOSFET
WFW9N90W Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Features ■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFW24N50W Silicon N-Channel MOSFET General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Published: |