WFW24N50W
Description
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
- Ultra-low Gate charge(Typical 90nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃) WFW24N50W Silicon N-Channel MOSFET
