Datasheet4U Logo Datasheet4U.com

WGP15G65 - Silicon N-Channel MOSFET

Description

Absolute Maximum Ratings symbol Parameter VGE Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C IC Collector Current (continuous) at TC = 100°C ICM(1) Collector Current (pulsed) Eas Single Pulse Energy TC= 25°C PTOT Total Dissipation at TC = 25°C ESD ESD (Human Body Model)

📥 Download Datasheet

Datasheet Details

Part number WGP15G65
Manufacturer Winsemi
File Size 519.12 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WGP15G65 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Winsemi

Part Number Description

Full PDF Text Transcription

Click to expand full text
WGP15G65 Product Description Absolute Maximum Ratings symbol Parameter VGE Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C IC Collector Current (continuous) at TC = 100°C ICM(1) Collector Current (pulsed) Eas Single Pulse Energy TC= 25°C PTOT Total Dissipation at TC = 25°C ESD ESD (Human Body Model) Tstg Storage Temperature Tj Max. Operating Junction Temperature (1)Pulse width limited by safe operating area Thermal Characteristics Symbol RQJ C RQJ A Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value 40 30 15 45 500 150 3 - 55 to 150 Unit V A A A mJ W KV ℃ Value Min Typ --- Max 0.75 62.
Published: |