WSC3085
Description
The WSC3085 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
N-Ch MOSFET
Product Summery
BVDSS
RDSON
30V
3.0mΩ
85A
Applications
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
TO-251-3L Pin Configuration
(2)
(1) G
S (3)
Absolute Maximum Ratings
Symbol
VDS VGS ID(TC=25℃) ID(TC=100℃ ) IDM EAS PD(TC=25℃) TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single pulse avalanche energy (Note 5) Total Power Dissipation Operating Junction and Storage Temperature Range
Rating
30 ±20 85
35 190 356 83 -55...
