WSD1006GDN22 - N-Channel MOSFET

Winsok

General Description

The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Excellent CdV/dt effect decline.
100% EAS Guaranteed.
Green Device Available WSD1006GDN22 N-Channel MOSFET Product Summery BVDSS 100V RDS(ON) 20mΩ ID 6.5A.

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WSD1006GDN22 n-channel mosfet by Winsok - Datasheet Preview

Datasheet Details

Part number	WSD1006GDN22
Manufacturer	Winsok
File Size	1.05 MB
Description	N-Channel MOSFET
Datasheet	WSD1006GDN22 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD1006GDN22 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features ⚫ Advanced high cell density Trench technology ⚫ Super Low Gate Charge ⚫ Excellent CdV/dt effect decline ⚫ 100% EAS Guaranteed ⚫ Green Device Available WSD1006GDN22 N-Channel MOSFET Product Summery BVDSS 100V RDS(ON) 20mΩ ID 6.5A Applications ⚫ Power Management in TV Converter.