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WSD1006GDN22 - N-Channel MOSFET

Datasheet Summary

Description

The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available WSD1006GDN22 N-Channel MOSFET Product Summery BVDSS 100V RDS(ON) 20mΩ ID 6.5A.

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Datasheet preview – WSD1006GDN22

Datasheet Details

Part number WSD1006GDN22
Manufacturer Winsok
File Size 1.05 MB
Description N-Channel MOSFET
Datasheet download datasheet WSD1006GDN22 Datasheet
Additional preview pages of the WSD1006GDN22 datasheet.

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Full PDF Text Transcription

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General Description The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The WSD1006GDN22 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features ⚫ Advanced high cell density Trench technology ⚫ Super Low Gate Charge ⚫ Excellent CdV/dt effect decline ⚫ 100% EAS Guaranteed ⚫ Green Device Available WSD1006GDN22 N-Channel MOSFET Product Summery BVDSS 100V RDS(ON) 20mΩ ID 6.5A Applications ⚫ Power Management in TV Converter.
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