Datasheet4U Logo Datasheet4U.com

WSD2010DN25 - Dual N-Channel MOSFET

Datasheet Summary

Description

The WSD2010DN25 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSD2010DN25 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 6.0mΩ ID 11A.

📥 Download Datasheet

Datasheet preview – WSD2010DN25

Datasheet Details

Part number WSD2010DN25
Manufacturer Winsok
File Size 2.98 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSD2010DN25 Datasheet
Additional preview pages of the WSD2010DN25 datasheet.
Other Datasheets by Winsok

Full PDF Text Transcription

Click to expand full text
General Description The WSD2010DN25 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSD2010DN25 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSD2010DN25 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 6.
Published: |