WSD2012DN25
Description
The WSD2012DN25 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The WSD2012DN25 meet the Ro HS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Dual N-Channel MOSFET
Product Summery
BVDSS 20V
RDSON 7.0mΩ
ID 11A
Applications z Power management in portable and battery operated products z DC-DC Power System z ESD:2KV
DFN2X5-6S Pin Configuration
D (7)
(3)
(4)
G1
G2
S1 (1,2)
S2 (5,6)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃ PD@TA=70℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3...
