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WSD2012DN25 - Dual N-Channel MOSFET

Datasheet Summary

Description

The WSD2012DN25 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSD2012DN25 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 7.0mΩ ID 11A.

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Datasheet Details

Part number WSD2012DN25
Manufacturer Winsok
File Size 2.93 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSD2012DN25 Datasheet
Additional preview pages of the WSD2012DN25 datasheet.

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Full PDF Text Transcription

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General Description The WSD2012DN25 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSD2012DN25 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSD2012DN25 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 7.
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