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WSD2098DN23 - Dual N-Channel MOSFET

General Description

The WSD2098DN23 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSD2098DN23 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 15.5mΩ ID 7.5A.

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Datasheet Details

Part number WSD2098DN23
Manufacturer Winsok
File Size 1.89 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSD2098DN23 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description The WSD2098DN23 is the highest performance trench N-Channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSD2098DN23 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSD2098DN23 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 15.5mΩ ID 7.5A Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.