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WSD3810DN - Dual N-Ch MOSFET

Datasheet Summary

Description

The WSD3810DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Product Summery BVDSS RDSON ID ITEM 30V 10.8mΩ 18A Q1 30V 10.5mΩ 18A Q2.

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Datasheet preview – WSD3810DN

Datasheet Details

Part number WSD3810DN
Manufacturer Winsok
File Size 2.97 MB
Description Dual N-Ch MOSFET
Datasheet download datasheet WSD3810DN Datasheet
Additional preview pages of the WSD3810DN datasheet.

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WSD3810DN Dual N-Ch MOSFET General Description The WSD3810DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3810DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Product Summery BVDSS RDSON ID ITEM 30V 10.8mΩ 18A Q1 30V 10.
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